Recently, Gaogong LED reporter learned from relevant people that the high-power high-brightness LED chip project invested and constructed by Jiangsu Arctic Haotian Technology Co., Ltd. will be completed in the first phase of construction at the end of September this year. It plans to produce 90,000 pieces of epitaxially and 1W of high power. There are 473 million high-brightness chips. The second phase of construction will be completed by the end of 2012, with an additional investment of 500 million yuan, adding 10 MOCVD and supporting production lines, producing a total of 567,000 epitaxy and nearly 1.42 billion 1W high-power chips.
At present, the company has signed a contract with AIXTRON of Germany to purchase 5 42-inch 2-inch MOCVD equipment.
About Jiangsu Arctic Haotian Technology Co., Ltd.
The company was established in October 2009, and the production project is located in Yixing Economic Development Zone, Jiangsu Province, with a total investment of 1.02 billion yuan.
The company and the State Key Laboratory of Integrated Optoelectronics of Tsinghua University formally signed a technology patent transfer and long-term cooperation agreement. According to the agreement, Tsinghua University not only transferred two LED patent technologies to the Arctic Haotian, but also provided production, R&D and personnel training support to the Arctic Haotian. Utilizing Tsinghua's excellent resources and Arctic Haotian core technology team, especially the technical director Sun Runguang's "blue LED + YAG crystal light-emitting device and manufacturing method" and "an inorganic light-emitting diode moment display device" two patented technologies.
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