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International Rectifier (IR) has introduced the IRAUDAMP3 Class D audio reference design. This new small reference design features the IRS20124S high voltage analog IC and the IRF6645 DirectFET® power MOSFET for a 120W six-channel, half-bridge Class D audio power amplifier without a heat sink.Mr. Tan Zhongneng, Vice President of Energy Products at IR, stated: "By optimizing our Class D audio high voltage ICs with industry leading power MOSFETs, IRAUDAMP3 offers our customers significant performance and size advantages."
The reference design with integrated IRS20124S high-voltage integrated circuit features an internal selectable dead-time generation circuit that prevents noise and supply voltage fluctuations and helps achieve 0.01% total harmonic distortion (THD) at 60W, 4Ω. 94% efficiency can be achieved in a single 120W, 4Ω channel. In addition, the IC also incorporates dual current sensing and an integrated shutdown function to protect the output MOSFET in the event of an overcurrent condition such as a speaker lead short.
The IRAUDAMP3 has a footprint of 4.5 square inches and also uses the IRF6645 DirectFET power MOSFET. The innovative DirectFET package technology improves the performance of Class D audio amplifier circuits by reducing lead inductance, improving switching performance, and reducing EMI noise. Its high thermal performance contributes to 120W operation at 4Ω impedance without the need for a heat sink, which not only reduces the circuit size, but also provides designers with greater flexibility in circuit layout and lowers the amplifier system. Overall cost.
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